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Manufacturer	NEXPERIA
Type of transistor	P-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-0.3A
Pulsed drain current	-2A
Case	DFN1010B-6, SOT1216
On-state resistance	2.1Ω
Mounting	SMD
Gate charge	2.1nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMDXB950UPEZ

Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A

Specification

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