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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	30V
Drain current	6A
Pulsed drain current	18A
Power dissipation	1.5W
Case	TSMD8
Gate-source voltage	±20V
On-state resistance	39mΩ
Mounting	SMD
Gate charge	5.5nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

QS8K13TCR

Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8

Specification

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