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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	76A
Pulsed drain current	228A
Power dissipation	735W
Case	TO247
Gate-source voltage	±20V
On-state resistance	85mΩ
Mounting	THT
Gate charge	260nC
Kind of package	tube
Kind of channel	enhancement

R6076ENZ4C13

Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 735W; TO247

Specification