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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	190V
Drain current	7.5A
Pulsed drain current	30A
Power dissipation	52W
Case	TO252
Gate-source voltage	±20V
On-state resistance	347mΩ
Mounting	SMD
Gate charge	30nC
Kind of package	reel, tape
Kind of channel	enhancement

RD3S075CNTL1

Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252

Specification

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