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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	190V
Drain current	10A
Pulsed drain current	40A
Power dissipation	85W
Case	TO252
Gate-source voltage	±20V
On-state resistance	0.19Ω
Mounting	SMD
Gate charge	52nC
Kind of package	reel, tape
Kind of channel	enhancement

RD3S100CNTL1

Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252

Specification

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