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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	430V
Collector current	30A
Power dissipation	125W
Case	TO252
Gate-emitter voltage	±10V
Mounting	SMD
Gate charge	22nC
Kind of package	reel, tape
Turn-on time	1µs
Turn-off time	9.5µs
Application	automotive industry, ignition systems
Version	ESD

RGPR30BM40HRTL

Transistor: IGBT; 430V; 30A; 125W; TO252; ESD

Specification

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