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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	50A
Power dissipation	138W
Case	TO247-3
Gate-emitter voltage	±30V
Pulsed collector current	200A
Mounting	THT
Gate charge	94nC
Kind of package	tube
Turn-on time	102ns
Turn-off time	221ns
Features of semiconductor devices	integrated anti-parallel diode

RGTH00TS65DGC11

Transistor: IGBT; 650V; 50A; 138W; TO247-3

Specification