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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	30A
Pulsed drain current	132A
Power dissipation	185W
Case	HU3PAK
Gate-source voltage	-10...22V
On-state resistance	72mΩ
Mounting	SMD
Gate charge	29nC
Kind of package	reel, tape
Kind of channel	enhancement

SCT055HU65G3AG

Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 132A; 185W

Specification