+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
We apologise for any inconvenience.

IMPORTANT: All international orders are subject to customs and duty fees as defined by the country of import. Customs and duty fees are not included in your TME order and/or shipping total. TME is not responsible for fees associated with import. All fees must be paid by the parcel recipient. Orders shipped and unclaimed or refused by customers will be managed under the TME protocol.

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	12A
Pulsed drain current	24A
Power dissipation	150W
Case	HIP247™
Gate-source voltage	-10...25V
On-state resistance	690mΩ
Mounting	THT
Gate charge	22nC
Kind of package	tube
Kind of channel	enhancement

SCT10N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W

Specification