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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	7A
Pulsed drain current	25A
Power dissipation	85W
Case	TO247
Gate-source voltage	-6...22V
On-state resistance	0.45Ω
Mounting	THT
Gate charge	27nC
Kind of package	tube
Kind of channel	enhancement

SCT2450KEC

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247

Specification