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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC, SiCFET
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	34A
Pulsed drain current	90A
Power dissipation	270W
Case	HIP247™
Gate-source voltage	-10...25V
On-state resistance	0.1Ω
Mounting	THT
Gate charge	105nC
Kind of package	tube
Kind of channel	enhancement

SCT30N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W

Specification