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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-40V
Drain current	-8.5A
Pulsed drain current	-34A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	18.7mΩ
Mounting	SMD
Gate charge	51nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

SH8JB5TB1

Transistor: P-MOSFET x2; unipolar; -40V; -8.5A; Idm: -34A; 2W; SO8

Specification

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