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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	60V
Drain current	13A
Pulsed drain current	30A
Power dissipation	5.8W
Case	SOP8
Gate-source voltage	±20V
On-state resistance	30mΩ
Mounting	SMD
Gate charge	25nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

SH8K39GZETB

Transistor: N-MOSFET x2; unipolar; 60V; 13A; Idm: 30A; 5.8W; SOP8

Specification

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