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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N/P-MOSFET
Polarisation	unipolar
Drain-source voltage	100/-100V
Drain current	3/-2.5A
Pulsed drain current	10...12A
Power dissipation	2W
Case	SOP8
Gate-source voltage	±20V
On-state resistance	190/340mΩ
Mounting	SMD
Gate charge	8.5/12.5nC
Kind of package	reel, tape
Kind of channel	enhancement

SH8M51GZETB

Transistor: N/P-MOSFET; unipolar; 100/-100V; 3/-2.5A; Idm: 10÷12A

Specification

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