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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N/P-MOSFET
Polarisation	unipolar
Drain-source voltage	40/-40V
Drain current	8.5/-8.5A
Pulsed drain current	34A
Power dissipation	2W
Case	SOP8
Gate-source voltage	±20V
On-state resistance	26/21mΩ
Mounting	SMD
Gate charge	10.6/51nC
Kind of package	reel, tape
Kind of channel	enhancement

SH8MB5TB1

Transistor: N/P-MOSFET; unipolar; 40/-40V; 8.5/-8.5A; Idm: 34A; 2W

Specification

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