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SI4931DY-T1-GE3

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8


Manufacturer: VISHAY

Manufacturer part number:
SI4931DY-T1-GE3
TME Symbol:
SI4931DY-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
P-MOSFET x2
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
-12V
Drain current
-8.9A
Pulsed drain current
-30A
Power dissipation
2W
Case
SO8
Gate-source voltage
±8V
On-state resistance
28mΩ
Mounting
SMD
Gate charge
52nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
*
SI4931DY-T1-GE3
0 in TME stock
Net price for quantities from 2500 pcs - 0.80 USDGross price for quantities from 2500 pcs - 0.80 USD
No. of pieces (Multiplicity: 2 500)
Minimum order quantity: 2 500.
Multiplicity: 2 500.