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Manufacturer	VISHAY
Type of transistor	P-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-4A
Pulsed drain current	-10A
Power dissipation	2W
Case	ChipFET8
Gate-source voltage	±8V
On-state resistance	156mΩ
Mounting	SMD
Gate charge	11nC
Kind of package	reel, tape
Kind of channel	enhancement
Case - inch	1206
Case - mm	3216

SI5935CDC-T1-GE3

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -10A

Specification

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