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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	20V
Drain current	25A
Pulsed drain current	40A
Power dissipation	23W
Case	PowerPAK® 1212-8
Gate-source voltage	±8V
On-state resistance	24mΩ
Mounting	SMD
Gate charge	32nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7232DN-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A

Specification