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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	60V
Drain current	3.5A
Pulsed drain current	14A
Power dissipation	2W
Case	SOP8
Gate-source voltage	±20V
On-state resistance	0.15Ω
Mounting	SMD
Gate charge	3.7nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

SP8K31FRATB

Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD

Specification

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