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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1kV
Drain current	1A
Pulsed drain current	8.8A
Power dissipation	90W
Case	DPAK
Gate-source voltage	±30V
On-state resistance	6.8Ω
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

STD4NK100Z

Transistor: N-MOSFET; unipolar; 1000V; 1A; Idm: 8.8A; 90W; DPAK; ESD

Specification

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