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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SuperMESH3™
Polarisation	unipolar
Drain-source voltage	950V
Drain current	3A
Pulsed drain current	16A
Power dissipation	90W
Case	DPAK
Gate-source voltage	±30V
On-state resistance	3.5Ω
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

STD5N95K3

Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 3A; Idm: 16A; 90W

Specification

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