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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	6A
Power dissipation	88W
Case	DPAK
Gate-emitter voltage	±20V
Pulsed collector current	24A
Mounting	SMD
Gate charge	21.2nC
Kind of package	reel, tape
Features of semiconductor devices	integrated anti-parallel diode

STGD6M65DF2

Transistor: IGBT; 650V; 6A; 88W; DPAK

Specification