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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	4A
Power dissipation	68W
Case	TO220AB
Gate-emitter voltage	±20V
Pulsed collector current	16A
Mounting	THT
Gate charge	15.2nC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

STGP4M65DF2

Transistor: IGBT; 650V; 4A; 68W; TO220AB

Specification