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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	30A
Power dissipation	258W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	120A
Mounting	THT
Gate charge	80nC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

STGW30M65DF2

Transistor: IGBT; 650V; 30A; 258W; TO247-3

Specification