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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	40A
Power dissipation	283W
Case	TO3P
Gate-emitter voltage	±30V
Pulsed collector current	160A
Mounting	THT
Gate charge	0.21µC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

STGWT40HP65FB

Transistor: IGBT; 650V; 40A; 283W; TO3P

Specification