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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	MDmesh™ DM6
Polarisation	unipolar
Drain-source voltage	650V
Drain current	35A
Pulsed drain current	172A
Power dissipation	431W
Case	TO247
Gate-source voltage	±25V
On-state resistance	59mΩ
Mounting	THT
Gate charge	80nC
Kind of package	tube
Kind of channel	enhancement

STW68N65DM6

Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A

Specification