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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	MDmesh™ V
Polarisation	unipolar
Drain-source voltage	650V
Drain current	61A
Power dissipation	625W
Case	MAX247
Gate-source voltage	±25V
On-state resistance	22mΩ
Mounting	THT
Kind of package	tube
Kind of channel	enhancement
Version	ESD

STY112N65M5

Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 61A; 625W; MAX247

Specification