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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	MDmesh™
Polarisation	unipolar
Drain-source voltage	600V
Drain current	37.8A
Pulsed drain current	60A
Power dissipation	460W
Case	MAX247
Gate-source voltage	±30V
On-state resistance	55mΩ
Mounting	THT
Kind of package	tube
Kind of channel	enhancement
Version	ESD

STY60NM60

Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247

Specification