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Manufacturer	ONSEMI
Type of transistor	N-JFET / N-MOSFET
Technology	SiC
Polarisation	unipolar
Kind of transistor	cascode
Drain-source voltage	1.2kV
Drain current	35A
Pulsed drain current	140A
Power dissipation	242W
Case	TO247-3
Gate-source voltage	-25...25V
On-state resistance	75mΩ
Mounting	THT
Gate charge	37.8C
Kind of package	tube
Kind of channel	enhancement

UJ3C120080K3S

Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 35A

Specification