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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N/P-MOSFET
Polarisation	unipolar
Drain-source voltage	30/-20V
Drain current	1.5/-1A
Pulsed drain current	4...6A
Power dissipation	1W
Case	TUMT6
Gate-source voltage	±12V
On-state resistance	340/800mΩ
Mounting	SMD
Gate charge	1.6/2.1nC
Kind of package	reel, tape
Kind of channel	enhancement

US6M2TR

Transistor: N/P-MOSFET; unipolar; 30/-20V; 1.5/-1A; Idm: 4÷6A; 1W

Specification

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