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Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 100V | ||
Drain current | 360A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 2.6mΩ | ||
Pulsed drain current | 900A | ||
Power dissipation | 830W | ||
Technology | GigaMOS™, HiPerFET™ | ||
Kind of channel | enhancement | ||
Gate charge | 525nC | ||
Reverse recovery time | 130ns | ||
Gate-source voltage | ±30V | ||
Mechanical mounting | screw |