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Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 100V | |
Drain current | 360A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 2.6mΩ | |
Pulsed drain current | 900A | |
Power dissipation | 830W | |
Technology | GigaMOS™, HiPerFET™ | |
Kind of channel | enhancement | |
Gate charge | 525nC | |
Reverse recovery time | 130ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |