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Manufacturer | IXYS | ||
Type of semiconductor module | MOSFET transistor | ||
Semiconductor structure | single transistor | ||
Drain-source voltage | 1kV | ||
Drain current | 37A | ||
Case | SOT227B | ||
Electrical mounting | screw | ||
Polarisation | unipolar | ||
On-state resistance | 0.22Ω | ||
Pulsed drain current | 110A | ||
Power dissipation | 890W | ||
Technology | HiPerFET™, Polar™ | ||
Kind of channel | enhancement | ||
Gate charge | 0.35µC | ||
Reverse recovery time | 300ns | ||
Gate-source voltage | ±40V | ||
Mechanical mounting | screw |