Single IGBT transistor modules by Ixys
Single IGBT transistor modules by IxysDate of publication: 26-05-2025 🕒 2 min read
TME catalogue offers a wide portfolio of discrete IGBT transistors and power modules. Special attention should be paid to products from the renowned and respected supplier Ixys, now part of another well-known brand – Littelfuse.
Insulated Gate Bipolar Transistors (IGBTs) are voltage-controlled devices that combine the advantages of traditional BJTs—such as high operating voltage, high current capacity, and low saturation voltage—with the fast switching characteristics of MOSFETs. They have been available on the market for a long time and continue to demonstrate versatility, particularly in high-power circuit applications.
The presented transistor modules are manufactured using Planar Gate and Trench Gate technologies. Popular product subcategories include PT (Punch Through), NPT (Non-Punch Through), XPT (eXtreme-light Punch Through) and BiMOSFET (a combination of MOSFET and IGBT technology, featuring high power density and reverse voltage resistance up to 1.7kV). The range includes low (<15kHz), medium (15–40kHz), and high (>40kHz) frequency variants, suitable for standard (0.6–1.2kV), high (1.2–1.7kV), and very high (2.5–4kV) voltages.
Single transistor module IXFN50N120SK
Of particular interest are the single IGBT transistor modules in a compact SOT227B (miniBLOC) package. These solutions feature user-friendly screw terminals and optimal heat dissipation thanks to DCB substrate (Direct Copper Bonding) – direct copper-to-ceramic bonding. They hold UL safety certification (E72873, E153432) and comply with RoHS standards.
The SOT227B-packaged IGBT product family is suitable for a wide range of applications such as: motor control, UPS backup systems, PV inverters (renewable energy installations, energy storage), welding machines, DC-DC and AC-DC converters.
| Specification | |
|---|---|
| Module type | IGBT |
| Max. reverse voltage* | 0.6…1.7kV |
| Collector current* | 21…200A |
| Package | SOT227B |
| Electrical mounting | screw |
| Gate-emitter voltage | ±20V |
| Pulsed collector current* | 0.1…1.5kA |
| Power dissipation* | 290…1250W |
| Technology | GenX3™, XPT™ |
| Mechanical mounting | screw |
* depending on the model
