+1 500 000 products in offer

6000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

No U.S. Customs – Order from TME with Confidence

Here you will find out more

B3M025065H

Transistor: N-MOSFET; SiC; unipolar; 650V; 88A; Idm: 197A; 500W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B3M025065H
TME Symbol:
B3M025065H

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
650V
Drain current
88A
Pulsed drain current
197A
Power dissipation
500W
Case
TO247-3
Gate-source voltage
-5...18V
On-state resistance
25mΩ
Mounting
THT
Gate charge
98nC
Kind of package
tube
Kind of channel
enhancement
Gross weight1 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
*
B3M025065H
0 in TME stock
Net price for quantities from 1 pcs - 3.06 USDGross price for quantities from 1 pcs - 3.06 USD
Net price for quantities from 10 pcs - 2.75 USDGross price for quantities from 10 pcs - 2.75 USD
Net price for quantities from 30 pcs - 2.43 USDGross price for quantities from 30 pcs - 2.43 USD
Net price for quantities from 120 pcs - 2.19 USDGross price for quantities from 120 pcs - 2.19 USD
Net price for quantities from 300 pcs - 2.03 USDGross price for quantities from 300 pcs - 2.03 USD
No. of pieces (Multiplicity: 1)