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Here you will find out moreManufacturer | BASiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 650V | |
Drain current | 47A | |
Pulsed drain current | 108A | |
Power dissipation | 250W | |
Case | TO247-4 | |
Gate-source voltage | -4...18V | |
On-state resistance | 40mΩ | |
Mounting | THT | |
Gate charge | 60nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |