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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	47A
Pulsed drain current	108A
Power dissipation	250W
Case	TO247-4
Gate-source voltage	-4...18V
On-state resistance	40mΩ
Mounting	THT
Gate charge	60nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

B3M040065Z

Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 108A; 250W

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand