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B2M040120Z

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 51A; Idm: 128A; 348W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B2M040120Z
TME Symbol:
B2M040120Z

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
51A
Pulsed drain current
128A
Power dissipation
348W
Case
TO247-4
Gate-source voltage
-4...18V
On-state resistance
40mΩ
Mounting
THT
Gate charge
90nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight1 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
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B2M040120Z
0 in TME stock
Net price for quantities from 1 pcs - 3.84 USDGross price for quantities from 1 pcs - 3.84 USD
Net price for quantities from 10 pcs - 3.46 USDGross price for quantities from 10 pcs - 3.46 USD
Net price for quantities from 30 pcs - 3.05 USDGross price for quantities from 30 pcs - 3.05 USD
Net price for quantities from 120 pcs - 2.75 USDGross price for quantities from 120 pcs - 2.75 USD
Net price for quantities from 300 pcs - 2.57 USDGross price for quantities from 300 pcs - 2.57 USD
No. of pieces (Multiplicity: 1)