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B3M040065H

Transistor: N-MOSFET; SiC; unipolar; 650V; 47A; Idm: 108A; 250W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B3M040065H
TME Symbol:
B3M040065H

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
650V
Drain current
47A
Pulsed drain current
108A
Power dissipation
250W
Case
TO247-3
Gate-source voltage
-5...18V
On-state resistance
40mΩ
Mounting
THT
Gate charge
60nC
Kind of package
tube
Kind of channel
enhancement
Gross weight1 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
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B3M040065H
0 in TME stock
Net price for quantities from 1 pcs - 2.16 USDGross price for quantities from 1 pcs - 2.16 USD
Net price for quantities from 10 pcs - 1.96 USDGross price for quantities from 10 pcs - 1.96 USD
Net price for quantities from 30 pcs - 1.72 USDGross price for quantities from 30 pcs - 1.72 USD
Net price for quantities from 120 pcs - 1.56 USDGross price for quantities from 120 pcs - 1.56 USD
Net price for quantities from 300 pcs - 1.45 USDGross price for quantities from 300 pcs - 1.45 USD
No. of pieces (Multiplicity: 1)