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Manufacturer | IXYS | ||
Type of transistor | N-MOSFET x2 | ||
Technology | HiPerFET™, Trench | ||
Polarisation | unipolar | ||
Drain-source voltage | 250V | ||
Drain current | 30A | ||
Pulsed drain current | 130A | ||
Power dissipation | 125W | ||
Case | ISOPLUS i4-pac™ x024a | ||
Gate-source voltage | ±30V | ||
On-state resistance | 60mΩ | ||
Mounting | THT | ||
Gate charge | 78nC | ||
Kind of package | tube | ||
Kind of channel | enhancement | ||
Semiconductor structure | double series | ||
Reverse recovery time | 84ns |