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Manufacturer: ONSEMI
Manufacturer | ONSEMI | |
Type of transistor | P-MOSFET | |
Technology | QFET® | |
Polarisation | unipolar | |
Drain-source voltage | -150V | |
Drain current | -25.5A | |
Power dissipation | 294W | |
Case | TO3PN | |
Gate-source voltage | ±30V | |
On-state resistance | 90mΩ | |
Mounting | THT | |
Gate charge | 105nC | |
Kind of package | tube | |
Kind of channel | enhancement |