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Manufacturer | IXYS | |
Type of transistor | N-MOSFET | |
Technology | HiPerFET™ | |
Polarisation | N | |
Drain-source voltage | 1kV | |
Drain current | 32A | |
Power dissipation | 890W | |
Case | TO264 | |
Gate-source voltage | 30V | |
On-state resistance | 0.22Ω | |
Mounting | THT | |
Gate charge | 130nC | |
Kind of channel | enhancement | |
Application | automotive industry | |
Reverse recovery time | 200ns |