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Manufacturer | IXYS | |
Type of transistor | P-MOSFET | |
Technology | TrenchP™ | |
Polarisation | unipolar | |
Drain-source voltage | -100V | |
Drain current | -210A | |
Power dissipation | 1.04kW | |
Case | PLUS247™ | |
Gate-source voltage | ±15V | |
On-state resistance | 7.5mΩ | |
Mounting | THT | |
Gate charge | 740nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Reverse recovery time | 200ns |