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LSIC1MO120G0025

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W


Manufacturer: LITTELFUSE

Manufacturer part number:
LSIC1MO120G0025
TME Symbol:
LSIC1MO120G0025

Specification

Manufacturer
LITTELFUSE
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
70A
Pulsed drain current
200A
Power dissipation
500W
Case
TO247-4
Gate-source voltage
-5...20V
On-state resistance
25mΩ
Mounting
THT
Gate charge
265nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight5 g
Certificates
See other products in this category: THT N channel transistors LITTELFUSE,
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LSIC1MO120G0025
0 in TME stock
Net price for quantities from 1 pcs - 45.80 USDGross price for quantities from 1 pcs - 45.80 USD
Net price for quantities from 5 pcs - 42.88 USDGross price for quantities from 5 pcs - 42.88 USD
Net price for quantities from 10 pcs - 36.74 USDGross price for quantities from 10 pcs - 36.74 USD
Net price for quantities from 30 pcs - 36.39 USDGross price for quantities from 30 pcs - 36.39 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.