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Manufacturer | NEXPERIA | |
Type of transistor | N-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | 60V | |
Drain current | 0.33A | |
Pulsed drain current | 0.8A | |
Power dissipation | 285mW | |
Case | DFN1010B-6, SOT1216 | |
Gate-source voltage | ±20V | |
On-state resistance | 2.8Ω | |
Mounting | SMD | |
Gate charge | 1nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Version | ESD |