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R6030JNZ4C13

Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247

Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
R6030JNZ4C13
TME Symbol:
R6030JNZ4C13

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
600V
Drain current
30A
Pulsed drain current
90A
Power dissipation
370W
Case
TO247
Gate-source voltage
±30V
On-state resistance
143mΩ
Mounting
THT
Gate charge
74nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.124 g
Certificates
See other products in this category: THT N channel transistors ROHM SEMICONDUCTOR,
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R6030JNZ4C13
523 in TME stock
Net price for quantities from 1 pcs - 8.69 USDGross price for quantities from 1 pcs - 8.69 USD
Net price for quantities from 5 pcs - 7.61 USDGross price for quantities from 5 pcs - 7.61 USD
Net price for quantities from 10 pcs - 7.08 USDGross price for quantities from 10 pcs - 7.08 USD
Net price for quantities from 30 pcs - 6.49 USDGross price for quantities from 30 pcs - 6.49 USD
Net price for quantities from 60 pcs - 6.04 USDGross price for quantities from 60 pcs - 6.04 USD
Net price for quantities from 120 pcs - 5.57 USDGross price for quantities from 120 pcs - 5.57 USD
Net price for quantities from 150 pcs - 5.46 USDGross price for quantities from 150 pcs - 5.46 USD
Net price for quantities from 300 pcs - 5.17 USDGross price for quantities from 300 pcs - 5.17 USD
Net price for quantities from 510 pcs - 5.00 USDGross price for quantities from 510 pcs - 5.00 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcsCardboard = 600 pcs