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RQ3E100BNTB

Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8

Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
RQ3E100BNTB
TME Symbol:
RQ3E100BNTB

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
30V
Drain current
21A
Pulsed drain current
40A
Power dissipation
15W
Case
HSMT8
Gate-source voltage
±20V
On-state resistance
15.3mΩ
Mounting
SMD
Gate charge
22nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.052 g
Certificates

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RQ3E100BNTB
6 in TME stock
Net price for quantities from 1 pcs - 0.68 USDGross price for quantities from 1 pcs - 0.68 USD
Net price for quantities from 10 pcs - 0.42 USDGross price for quantities from 10 pcs - 0.42 USD
Net price for quantities from 100 pcs - 0.27 USDGross price for quantities from 100 pcs - 0.27 USD
Net price for quantities from 500 pcs - 0.21 USDGross price for quantities from 500 pcs - 0.21 USD
Net price for quantities from 1000 pcs - 0.19 USDGross price for quantities from 1000 pcs - 0.19 USD
Net price for quantities from 3000 pcs - 0.19 USDGross price for quantities from 3000 pcs - 0.19 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerReel = 3 000 pcs