SCT10N120AG
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 24A; 150W
Manufacturer: STMicroelectronics
Manufacturer part number:
SCT10N120AG
TME Symbol:
SCT10N120AG
Specification
Manufacturer | STMicroelectronics | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 10A | |
Pulsed drain current | 24A | |
Power dissipation | 150W | |
Case | HIP247™ | |
Gate-source voltage | -10...25V | |
On-state resistance | 0.58Ω | |
Mounting | THT | |
Gate charge | 22nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Application | automotive industry |
Gross weight5.39 g
Certificates
See other products in this category: THT N channel transistors STMicroelectronics,
* SCT10N120AGNo. of pieces (Multiplicity: 600)
0 in TME stock
Net price for quantities from 600 pcs - 4.89 USDGross price for quantities from 600 pcs - 4.89 USD
Packaging method by the manufacturerTube = 30 pcs