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SCT2160KEGC11

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W

Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
SCT2160KEGC11
TME Symbol:
SCT2160KEGC11

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
22A
Pulsed drain current
55A
Power dissipation
165W
Case
TO247
Gate-source voltage
-6...22V
On-state resistance
208mΩ
Mounting
THT
Gate charge
62nC
Kind of package
tube
Kind of channel
enhancement
Gross weight3 g
Certificates
See other products in this category: THT N channel transistors ROHM SEMICONDUCTOR,
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SCT2160KEGC11
0 in TME stock
Net price for quantities from 1 pcs - 15.44 USDGross price for quantities from 1 pcs - 15.44 USD
Net price for quantities from 5 pcs - 14.34 USDGross price for quantities from 5 pcs - 14.34 USD
Net price for quantities from 10 pcs - 13.65 USDGross price for quantities from 10 pcs - 13.65 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.