+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

SI1922EDH-T1-BE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 1.2A; Idm: 4A

NEW

Manufacturer: VISHAY

Manufacturer part number:
SI1922EDH-T1-BE3
TME Symbol:
SI1922EDH-T1-BE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET x2
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
20V
Drain current
1.2A
Pulsed drain current
4A
Power dissipation
1.25W
Case
SC70-6, SC88, SOT363
Gate-source voltage
±8V
On-state resistance
198mΩ
Mounting
SMD
Gate charge
2.5nC
Kind of channel
enhancement
Version
ESD
Gross weight0.014 g
See other products in this category: Multi channel transistors VISHAY,
*
SI1922EDH-T1-BE3
0 in TME stock
Net price for quantities from 3000 pcs - 0.14 USDGross price for quantities from 3000 pcs - 0.14 USD
No. of pieces (Multiplicity: 3 000)