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Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 20V | |
Drain current | 1.2A | |
Pulsed drain current | 4A | |
Power dissipation | 1.25W | |
Case | SC70-6, SC88, SOT363 | |
Gate-source voltage | ±8V | |
On-state resistance | 198mΩ | |
Mounting | SMD | |
Gate charge | 2.5nC | |
Kind of channel | enhancement | |
Version | ESD |